査読論文リスト

[2024年]

1. 題名：Nucleation and grain growth in low-temperature rapid solid-phase crystallization of hydrogen-doped indium oxide,
   著者：Xiaoqian Wang, Yusaku Magari , Mamoru Furuta
   誌名： Japanese Journal of Applied Physics 63 03SP38 (2024)

[2022年]

1. 題名：Epitaxial Perovskite Single-Crystalline Heterojunctions for Filter-Free Ultra-Narrowband Detection with Tunable Spectral Responses ,
   著者：Yuzhu Pan, Xin Wang, Yuhan Liao, Yubing Xu, Yuwei Li, Qing Li, Xiaobing Zhang, Jing Chen, Zhuoya Zhu, Zhiwei Zhao, Elias Emeka Elemike, Mamoru Furuta, and Wei Lei
   誌名： ACS Applied Materials & Interfaces，14(44), 50331-50342 (2022)
2. 題名：Influence of Grain Boundary Scattering on the Field-Effect Mobility of Solid-Phase Crystallized Hydrogenated Polycrystalline In2O3 (In2O3:H) ,
   著者：Y. Magari, W. Yeh, T. Ina, and M. Furuta
   誌名： Nanomaterials，12(17), 2958 (2022)
3. 題名：High-mobility hydrogenated polycrystalline In2O3 (In2O3:H) thin-film transistors,
   著者：Y. Magari, T. Kataoka, W. Yeh, and M. Furuta
   誌名： Nature Communications，13, 1078 (2022)
4. 題名：Defect Passivation and Carrier Reduction Mechanisms in Hydrogen-Doped In-Ga-Zn-O (IGZO:H) Films upon Low-Temperature Annealing for Flexible Device Applications ,
   著者：R. Velichko, Y. Magari, and M. Furuta
   誌名： Materials，15(1)，334 (2022)
5. 題名：Nondegenerate Polycrystalline Hydrogen-Doped Indium Oxide (InOx:H) Thin Films Formed by Low-Temperature Solid-Phase Crystallization for Thin Film Transistors,
   著者：T. Kataoka, Y. Magari, H. Makino, and M. Furuta
   誌名： Materials，15(1)，187 (2022)

[2021年]

1. 題名：Impact of organic inter-layer dielectric for improvement in mechanicalflexibility of self-aligned coplanar in-Ga-Zn-O thin-film transistor,
   著者：H. Kim，H. Jang，M. Furuta，J. Yoon，S. Oh，S. Yoon
   誌名： Organic Electronics，Vol.96，106223 (2021)
2. 題名：Investigation of the effect of adding a moderate amount of hydrogen on the properties of tin oxide films deposited by DC magnetron sputtering,
   著者：R. Velichko，Y. Magari, H. Makino，and M. Furuta
   誌名： Japanese Journal of Applied Physics，Vol.60，055503 (2021)
3. 題名：Effects of water and hydrogen introduction during In–Ga–Zn–O sputtering on the performance of low-temperature processed thin-film transistors,
   著者：Y. Magari and M. Furuta
   誌名： Japanese Journal of Applied Physics，Vol.60，SBBM04 (2021)
4. 題名：Hydrogenated In–Ga–Zn–O thin-film transistors with anodized and fluorinated Al2O3 gate insulator for flexible devices,
   著者：S. Kono，Y. Magari，M. Mori，S G M. Aman，N. Fruehauf，H. Furuta，and M. Furuta
   誌名： Japanese Journal of Applied Physics，Vol.60，SBBM05 (2021)

[2020年] 8編

1. 題名：Record-High-Performance Hydrogenated In–Ga–Zn–O Flexible Schottky Diodes,
   著者：Y. Magari，S G M. Aman，D. Sasaki，K. Masuda，K. Shimpo，H. Makino，M. Kimura，and M. Furuta
   誌名： ACS Applied Materials and Interfaces，Vol.12，pp.47739-47746 (2020)
2. 題名：Marked improvement in reliability of 150 °C-processed In–Ga–Zn–O (IGZO) thin-film transistors by applying hydrogenated IGZO as a channel material,
   著者：D. Koretomo, S. Hamada, M. Mori, Y. Magari, and M. Furuta
   誌名： Applied Physics Express, 13, 076501 (2020)
3. 題名：Quantum Confinement Effect in Amorphous In–Ga–Zn–O Heterojunction Channels for Thin-Film Transistors,
   著者：D. Koretomo, S. Hamada, Y. Magari, and M. Furuta
   誌名： Matelials 13, 1935 (2020)
4. 題名：Defect gradient control in amorphous InGaZnO for high-performance thin-film transistors;,
   著者：D. Wang, D. Li, W. Zhao, M. Furuta
   誌名： Journal of Phisics D:Applied Physics，Vol.53，1351404 (2020))
5. 題名：Understanding the Role of Temperature and Drain Current Stress in InSnZnO TFTs with Various Active Layer Thicknesses;,
   著者：D. Wang, M. Furuta, S. Tomai, and K. Yano
   誌名： Nanomaterials 10, 617 (2020)
6. 題名：Low-temperature (150 °C) processed metal-semiconductor field-effect transistor with a hydrogenated In–Ga–Zn–O stacked channel,
   著者：Y. Magari, S G M. Aman, D. Koretomo, K. Masuda, K. Shimpo, and M. Furuta
   誌名： Japanese Journal of Applied Physics 59, SGGJ04 (2020)
7. 題名：A Facile Doping Process of the Organic Inter-Layer Dielectric for Self-Aligned Coplanar In-Ga-Zn-O Thin-Film Transistors,
   著者：H. E. Kim, M. Furuta, and S. M. Yoon
   誌名： IEEE Electron Device Letters 41, 393-396 (2020)
8. 題名：Origin of work function engineering of silver oxide for an In–Ga–Zn–O Schottky diode,
   著者：Y. Magari, H. Makino, S. Hashimoto, and M. Furuta
   誌名： Applied Surface Science, 512, 144519 (2020)

[2019年] 10編

1. 題名：“Highly Robust Flexible Vertical-Channel Thin-Film Transistors Using Atomic-Layer-Deposited Oxide Channels and Zeocoat Spacers on Ultrathin Polyimide Substrates ”,
   著者：Hyeong-Rae Kim ; Mamoru Furuta ; Sung-Min Yoon
   誌名： Applied Electronic Materials 1, 2363-2370 (2019)
2. 題名：“レアメタルフリーGaSnO材料の薄膜トランジスタへの応用 ”,
   著者：松田　時宜 ; 梅田　鉄馬 ; 加藤　雄太 ; 西本　大貴 ; 杉崎　澄生 ; 古田　守 ; 木村　睦
   誌名：電子情報通信学会論文誌 J102-C/11, 305-311 (2019)
3. 題名：“Memristive Characteristic of an Amorphous Ga-Sn-O Thin-Film Device with Double Layers of Diferent Oxygen Density ”,
   著者：Ayata Kurasaki, Ryo Tanaka, Sumio Sugisaki, Tokiyoshi Matsuda, Daichi Koretomo, Yusaku Magari, Mamoru Furuta and Mutsumi Kimura
   誌名：Materials 12, 3236 (2019)
4. 題名：“Quantitative analysis of annealing-induced instabilities of photo-leakage current and negative-bias-illumination-stress in a-InGaZnO thin-film transistors ”,
   著者：Dapeng Wang, Mamoru Furuta
   誌名： Beilstein J. Nanotechnol. 10, 1125–1130 (2019)
5. 題名：“Electronic devices fabricated on mist-CVD-grown oxide semiconductors and their applications ”,
   著者：Giang T. Dang, Martin W. Allen, Mamoru Furuta, Toshiyuki Kawaharamura
   誌名： Japanese Journal of Applied Physics，Vol.58，No.9，090606 (2019)
6. 題名：“Heterojunction channel engineering to enhance performance and reliability of amorphous In–Ga–Zn–O thin-film transistors ”,
   著者：Mamoru Furuta, Daichi Koretomo, Yusaku Magari, S G Mehadi Aman, Ryunosuke Higashi, Syuhei Hamada
   誌名： Japanese Journal of Applied Physics，Vol.58，No.9，090604 (2019)
7. 題名：“Improvement in bias-stress and long-term stabilities for in-Ga-Zn-O thin-film transistors using solution-process-compatible polymeric gate insulator ”,
   著者：Sol-Mi Kwak，Hyeong-Rae Kim, Hye-Won Jang, Ji-Hee Yang, Mamoru Furuta, Sung-Min Yoon
   誌名： Organic Electronics，Vol.71，August，pp.7-13 (2019)
8. 題名：“High mobility sputtered InSb film by blue laser diode annealing ”,
   著者：C. J. Koswaththage，T. Higashizako，T. Okada，T. Sadoh，M. Furuta，B. S. Bae，T. Noguchi
   誌名： AIP advances，Vol.9，No.4，045009 (2019)
9. 題名：“Collaborative optimization of thermal budget annealing and active layer defect content enhancing electrical characteristics and bias stress stability in InGaZnO thin-film transistors ”,
   著者：D. Wang，W. Zhao，and M. Furuta
   誌名： Journal of Physics D: Applied Physics，Vol.52，235101 (2019)
10. 題名：“Influence of a SiO2 passivation on electrical properties and reliability of In–W–Zn–O thin-film transistor ”,
    著者：D. Koretomo, Y. Hashimoto, S. Hamada, M. Miyanaga, and M. Furuta
    誌名： Japanese Journal of Applied Physics, 58, 018003 (2019)

[2018年] 5編

1. 題名：“Exploring the photoleakage current and photoinduced negative bias instability in amorphous InGaZnO thin-film transistors with various active layer thicknesses ”,
   著者：D. Wang and M. Furuta
   誌名：BEILSTEIN Journal of Nanotechnology, 9, pp.2573-2580 (2018)
2. 題名：“Low-temperature (150℃) activation of Ar+O2+H2-sputtered In–Ga–Zn–O for thin-film transistors ”,
   著者：S G Mehadi Aman, Y. Magari, K. Simpo, Y. Hirota, H. Makino, D. Koretomo, and M. Furuta
   誌名： Applied Physics Express, 11, 081101 (2018)
3. 題名：“Influence of Deposition Temperature and Source Gas in PE-CVD for SiO2 Passivation on Performance and Reliability of In–Ga–Zn–O Thin-Film Transistors ”,
   著者：S G Mehadi Aman, D. Koretomo, Y. Magari, and M. Furuta
   誌名： IEEE Transactions on Electron Devices, 65, Issue: 8, August pp. 3257-3263 (2018)
4. 題名：“Correlation between passivation film density and reliability of In–Ga–Zn–O thin-film transistors ”,
   著者：S G Mehadi Aman, and M. Furuta
   誌名： Japanese Journal of Applied Physics, 57, 088001 (2018)
5. 題名：“Drain Current Stress-Induced Instability in Amorphous InGaZnO Thin-Film Transistors with Different Active Layer Thicknesses ”,
   著者：D. Wang, W. Zhao, H. Li, and M. Furuta
   誌名： Materials 2018, 11(4), 559

[2017年] 5編

1. 題名：“(Invited) Low-Temperature Processed InGaZnO MES-FET for Flexible Device Applications ”,
   著者：M. Furuta, Y. Magari, S. Hashimoto, and K. Hamada
   誌名： ECS Trans. 2017 volume 79, issue 1, 43-48
2. 題名：“Zinc tin oxide metal semiconductor field effect transistors and their improvement under negative bias (illumination) temperature stress ”,
   著者：G. T. Dang, T. Kawaharamura, M. Furuta, and M. W. Allen
   誌名： Appl. Phys. Lett. 110, 073502 (2017)
3. 題名：“Influence of Interface Traps on the Electrical Properties of Oxide Thin-Film Transistors with Different Channel Thicknesses ”,
   著者：J. Jiang, D. Wang, T. Matsuda, M. Kimura, S. Liu, and M. Furuta
   誌名： Journal of Nano Research, Vol. 46, pp. 93-99, 2017
4. 題名：“Carrier Generation Mechanism and Origin of Subgap States in Ar- and He-Plasma-Treated In–Ga–Zn–O Thin Films ”,
   著者：Yusaku Magari, Hisao Makino, and Mamoru Furuta
   誌名：ECS J. Solid State Sci. Technol. 2017 volume 6, issue 8, Q101-Q107
5. 題名：“Rare-metal-free high-performance Ga-Sn-O thin film transistor ”,
   著者：Tokiyoshi Matsuda, Kenta Umeda, Yuta Kato, Daiki Nishimoto, Mamoru Furuta and Mutsumi Kimura
   誌名：Scientific Reports 7, Article number: 44326 (2017)

[2016年] 10編

1. 題名：“Self-heating induced instability of oxide thin film transistors under dynamic stress ”,
   著者：Kahori Kise, Mami N. Fujii, Satoshi Urakawa, Haruka Yamazaki, Emi Kawashima, Shigekazu Tomai, Koki Yano, Dapeng Wang, Mamoru Furuta, Yasuaki Ishikawa, and Yukiharu Uraoka
   誌名：Appl. Phys. Lett. 108, 023501 (2016)
2. 題名：“Silver oxide Schottky contacts and metal semiconductor field-effect transistors on SnO2 thin films ”,
   著者：Giang T. Dang, Takayuki Uchida, Toshiyuki Kawaharamura, Mamoru Furuta, Adam R. Hyndman, Rodrigo Martinez, Shizuo Fujita, Roger J. Reeves and Martin W. Allen
   誌名：Applied Physics Express 9, 041101 (2016)
3. 題名：“(Invited) Low-Temperature Processed and Self-Aligned InGaZnO Thin-Film Transistor with an Organic Gate Insulator for Flexible Device Applications ”,
   著者：Mamoru Furuta, Tatsuya Toda, Gengo Tatsuoka and Yusaku Magari
   誌名：ECS Trans. 2016 volume 75, issue 10, 117-122
4. 題名：“Low-Temperature Processed Metal-Semiconductor Field-Effect Transistor with In-Ga-Zn-O/AgOx Schottky Gate ”,
   著者：Yusaku Magari, Shinsuke Hashimoto, Kenichiro Hamada and Mamoru Furuta
   誌名：ECS Trans. 2016 volume 75, issue 10, 139-144
5. 題名：“Suppression of Negative Gate Bias and Illumination Stress Degradation by Fluorine-Passivated In-Ga-Zn-O Thin-Film Transistors ”,
   著者：Mamoru Furuta, Jingxin Jiang, Mai Phi Hung, Tatsuya Toda, Dapeng Wang and Gengo Tatsuoka
   誌名：ECS J. Solid State Sci. Technol. 2016 volume 5, issue 3, Q88-Q91
6. 題名：“Anomalous Increase in Field-Effect Mobility in In–Ga–Zn–O Thin-Film Transistors Caused by Dry-Etching Damage Through Etch-Stop Layer ”,
   著者：Daichi Koretomo, Tatsuya Toda, Tokiyoshi Matsuda, Mutsumi Kimura, and Mamoru Furuta
   誌名：IEEE Transactions on Electron Devices, 63, Issue: 7, July pp. 2785-2789 (2016)
7. 題名：“Investigation of Carrier Generation Mechanism in Fluorine-Doped n+-In–Ga–Zn-O for Self-Aligned Thin-Film Transistors ”,
   著者： Dapeng Wang, Jingxin Jiang, and Mamoru Furuta
   誌名：Journal of Display Technology, 12, Issue: 3, March pp.258-262 (2016)
8. 題名：“High-Performance Top-Gate and Self-Aligned In–Ga–Zn-O Thin-Film Transistor Using Coatable Organic Insulators Fabricated at 150 °C ”,
   著者： Tatsuya Toda, Gengo Tatsuoka, Yusaku Magari, and Mamoru Furuta
   誌名：IEEE Electron Device Letters, 37, Issue: 8, Aug. pp. 1006-1009 (2016)
9. 題名：“Image Sensor with Organic Photoconductive Films by Stacking Red/Green and Blue Components ”,
   著者： T. Takagi, H. Seo, T. Sakai, H. Ohtake, and Mamoru Furuta
   誌名：Electronic Imaging, Image Sensors and Imaging Systems 2016, pp. 1-4(4)
10. 題名：“Water-triggered macroscopic structural transformation of a metal-organic framework ”,
    著者： M. Ohtani, K. Takase, P. Wang, K. Higashi, K. Ueno, N. Yasuda, K. Sugimoto, M. Furuta, and K. Kobiro
    誌名：CrystEngComm, 2016,18, 1866-1870


[2015年] 7編

1. 題名：“(Invited) Doping and Defect Passivation in In-Ga-Zn-O by Fluorine ”,
   著者：Mamoru Furuta, Jingxin Jiang, Gengo Tatsuoka and Dapeng Wang
   誌名：ECS Trans. 2015 volume 67, issue 1, 41-49
2. 題名：“Stability of In-Ga-Zn-O metal-semiconductor field-effect-transistors under bias, illumination, and temperature stress ”,
   著者： Giang T. Dang, Toshiyuki Kawaharamura, Mamoru Furuta, Saurabh Saxena and Martin W. Allen
   誌名：Appl. Phys. Lett. 107, 143504 (2015)
3. 題名：“Capacitance Sensor of Frequency Modulation for Integrated Touchpanels Using Amorphous In-Sn-Zn-O Thin-Film Transistors”,
   著者： Yuki KOGA, Tokiyoshi MATSUDA, Mutsumi KIMURA, Dapeng WANG, Mamoru FURUTA, Masashi KASAMI, Shigekazu TOMAI, Koki YANO
   誌名：IEICE Transactions on Electronics Vol. E98.C (2015) No. 11 pp. 1028-1031
4. 題名：“Origin of the Alternative Current (AC-) Gate Bias Improving the NBIS Stability of IGZO TFTs”,
   著者： Mai Phi Hung, Dapeng Wang and Mamoru Furuta
   誌名：ECS Solid State Lett. 2015 volume 4, issue 12, Q66-Q6
5. 題名：“Metal-Semiconductor Field-Effect Transistors With In–Ga–Zn–O Channel Grown by Nonvacuum-Processed Mist Chemical Vapor Deposition”,
   著者： Giang T. Dang, Toshiyuki Kawaharamura, Mamoru Furuta and Martin W. Allen
   誌名：IEEE Electron Device Letters, 36, Issue: 5, pp. 463-465 May (2015)
6. 題名：“Mist-CVD Grown Sn-Doped α -Ga2O3 MESFETs”,
   著者： Giang T. Dang, Toshiyuki Kawaharamura, Mamoru Furuta and Martin W. Allen
   誌名：IEEE Transactions on Electron Devices, 62, Issue: 11, pp. 3640-3644 Nov. (2015)
7. 題名：“Investigating Effect of Postannealing Time on Positive Bias Stress Stability of In–Ga–Zn–O TFT by Conductance Method”,
   著者： Mai Phi Hung, Dapeng Wang and Mamoru Furuta
   誌名：IEEE Transactions on Electron Devices, 62, Issue: 11, pp. 3697-3720 Nov. (2015)


[2014年] 15編

1. 題名：“Quantitative Analysis of the Effect of Hydrogen Diffusion from Silicon Oxide Etch-Stopper Layer into Amorphous In–Ga–Zn–O on Thin-Film Transistor”,
   著者： Tatsuya Toda, Dapeng Wang, Jingxin Jiang, Mai Phi Hung and Mamoru Furuta
   誌名：IEEE Transactions on Electron Devices, 61, Issue: 11, pp. 3762-3767 Nov. (2014)
2. 題名：“Highly stable fluorine-passivated In–Ga–Zn–O thin-film transistors under positive gate bias and temperature stress”,
   著者： Jingxin Jiang, Tatsuya Toda, Mai Phi Hung, Dapeng Wang and Mamoru Furuta
   誌名：Applied Physics Express, 7 (2014) 114103
3. 題名：“Quantitative Analysis of Hole-Trapping and Defect-Creation in InGaZnO Thin-Film Transistor under Negative-Bias and Illumination-Stress”,
   著者： Mai Phi Hung, Dapeng Wang, Tasuya Toda, Jingxin Jiang and Mamoru Furuta
   誌名：ECS J. Solid State Sci. Technol. 2014 volume 3, issue 9, Q3023-Q3026
4. 題名：“Drain Bias Effect on the Instability of Amorphous InGaZnO Thin-Film Transistors under Negative Gate Bias and Illumination Stress”,
   著者：Dapeng Wang, Mai Phi Hung, Jingxin Jiang, Tatsuya Toda and Mamoru Furuta
   誌名：ECS Trans. 2014 volume 64, issue 10, 65-70
5. 題名：“Improvement of Electrical Properties and Bias Stability of InGaZnO Thin-Film Transistors by Fluorinated Silicon Nitride Passivation ”,
   著者： Jingxin Jiang, Toda Tatsuya, Gengo Tatsuoka, Dapeng Wang and Mamoru Furuta
   誌名：ECS Trans. 2014 volume 64, issue 10, 59-64
6. 題名：“Self-Aligned Bottom-Gate In-Ga-Zn-O Thin-Film Transistor with Source/Drain Regions Formed by Selective Deposition of Fluorinated SiNx Passivation ”,
   著者： Mamoru Furuta, Jingxin Jiang, Gengo Tatsuoka and Dapeng Wang
   誌名：ECS Trans. 2014 volume 64, issue 10, 53-58
7. 題名：“Self-Aligned Bottom-Gate In-Ga-Zn-O Thin-Film Transistor with Source/Drain Regions Formed by Direct Deposition of Fluorinated Silicon Nitride ”,
   著者： Jingxin Jiang, Mamoru FUruta and Dapeng Wang
   誌名：IEEE Electron Device Letters, Volume: 35, Issue: 9, pp. 933-935 Sept. (2014)
8. 題名：“Fabrication of Zinc Oxide Nanostructures by Mist Chemical Vapor Deposition ”,
   著者： X. Li, C. Li, T. Kawaharamura, D. Wang, N. Nitta, M. Furuta, H. Furuta, and A. Hatta
   誌名：Transaction Material Research Society Japan, 39[2] pp.161-164 (2014)
9. 題名：“Ultrasonic-assisted mist chemical vapor deposition of II-oxide and related oxide compounds ”,
   著者： Shizuo Fujita, Kentaro Kaneko, Takumi Ikenoue, Toshiyuki Kawaharamura and Mamoru Furuta
   誌名：Physica status solidi (c), 11 (2014) pp.1225-1228
10. 題名：“Suppression of degradation induced by negative gate bias and illumination stress in amorphous InGaZnO thin-film transistor by applying negative drain bias ”,
    著者： Dapeng Wang, Mai Phi Hung, Jingxin Jiang, Tatsuya Toda, and Mamoru Furuta
    誌名：ACS Appl. Mater. Interfaces, 2014, 6 (8), pp 5713–5718
11. 題名：“Low temperature deposition of SiOx insulator film with newly developed facing electrodes chemical vapor deposition ”,
    著者： T. Matsuda, M. Furuta, T. Hiramatsu, H. Furuta, T. Kawaharamura, and T. Hirao
    誌名：Vacuum 101, March 2014, Pages 189–192
12. 題名：“High performance solution-processed InGaZnO thin-film Transistor fabricated by ozone-assisted atmospheric pressure mist deposition ”,
    著者： Dapeng Wang, Mai Phi Hung, Jingxin Jiang, Tatsuya Toda, and Mamoru Furuta
    誌名：Journal of Display Technology, Volume: 10, Issue: 11, pp.934-938 Nov. (2014)
13. 題名：“Effect of drain bias on negative gate bias and illumination stress induced degradation in amorphous InGaZnO thin-film transistors ”,
    著者： Dapeng Wang, Mai Phi Hung, Jingxin Jiang, Tatsuya Toda, Chaoyang Li and Mamoru Furuta
    誌名：Japanese Journal of Applied Physics, 53 03CC01 (2014)
14. 題名：“Influence of Substrates on Formation of Zinc Oxide Nanostructures by a Novel Reducing Annealing Method ”,
    著者： Li, Xin; Li, Chaoyang; Kawaharamura, Toshiyuki; Wang, Dapeng; Nitta, Noriko; Furuta, Mamoru; Furuta, Hiroshi; Hatta, Akimitsu
    誌名：Nanoscience and Nanotechnology Letters, Volume 6, Number 2, February 2014, pp. 174-180(7)
15. 題名：“Negative bias illumination stress induced electron trapping at back-channel interface of InGaZnO thin-film transistor ”,
    著者： Mai Phi Hung, Dapeng Wang, Jingxin Jiang and Mamoru Furuta
    誌名：ECS Solid State Lett. 2014 volume 3, issue 3, Q13-Q16


[2013年] 12編

1. 題名：“(Invited) Negative-Bias with Illumination Stress Induced State Creation in Amorphous InGaZnO Thin-Film Transistor ”,
   著者：M. Furuta, M.-P. Hung, J. Jiang, D. Wang, S. Tomai, H. Hayasaka, and K. Yano
   誌名：ECS Trans. 2013 volume 54, issue 1, 127-134
2. 題名：“Trap Densities in ZnO TFTs with SiNx/SiOx Stacked Gate Insulators Fabricated Using Several N2O Flow Rate during SiOx Deposition ”,
   著者：M. Kimura, T. Matsuda, M. Furuta, T. Hiramatsu, H. Furuta, C. Li, T. Hirao, Y. Kamada, and S. Fujita
   誌名：ECS Trans. 2013 volume 54, issue 1, 121-126
3. 題名：“Thin-Film Transistor Using Dielectrophoretic Assembly of Single-Walled Carbon Nanotubes ”,
   著者：T. Toda, T. Kawaharamura, H. Frusawa, and M. Furuta
   誌名：ECS Trans. 2013 volume 50, issue 8, 223-228
4. 題名：“A-InGaZnO Thin-Film Transistor with Non-Vacuum Processed InGaZnO/AlOx Gate Dielectric Stack ”,
   著者：M. Furuta, T. Kawaharamura, T. Toda, and D. Wang
   誌名：ECS Trans. 2013 volume 50, issue 8, 95-100
5. 題名：“Thin-Film Transistors Using Uniform and Well-Aligned Single-Walled Carbon Nanotubes Channels by Dielectrophoretic Assembly”,
   著者：T. Toda, H. Frusawa, and M. Furuta
   誌名：Japanese Journal of Applied Physiscs, 52 (2013) 03BB09
6. 題名：“Thermal analysis of amorphous oxide thin-film transistor degraded by combination of joule heating and hot carrier effect”,
   著者：Satoshi Urakawa, Shigekazu Tomai, Yoshihiro Ueoka, Haruka Yamazaki, Masashi Kasami, Koki Yano, Dapeng Wang, Mamoru Furuta, Masahiro Horita Yasuaki Ishikawa and Yukiharu Uraoka
   誌名：Appl. Phys. Lett. 102, 053506 (2013)
7. 題名：“Thermal distribution in amorphous InSnZnO thin-film transistor”,
   著者：Satoshi Urakawa, Shigekazu Tomai, Yoshihiro Ueoka, Haruka Yamazaki, Masashi Kasami, Koki Yano, Dapeng Wang, Mamoru Furuta, Masahiro Horita Yasuaki Ishikawa and Yukiharu Uraoka
   誌名：Physica status solidi (c), 10, No.11 pp. 1561-1564 (2013)
8. 題名：“Enhancing carrier mobility of IGZO TFT fabricated by non-vacuum mist CVD with O3 assistance”,
   著者：Toshiyuki Kawaharamura, Takayuki Uchida, Dapeng Wang, Masaru Sanada, and Mamoru Furuta
   誌名：Physica status solidi (c), 10 pp. 1565-1568 (2013)
9. 題名：“Growth and electrical properties of AlOx grown by mist chemical vapor deposition”,
   著者：Toshiyuki Kawaharamura, Takayuki Uchida, Masaru Sanada, and Mamoru Furuta
   誌名：AIP Advances, 3 pp. 032135 (2013)
10. 題名：“The Deterioration Phenomenon of Amorphous InSnZnO Transistors Derived from the Process of Annealing”,
    著者：Shigekazu Tomai, Hiromi Hayasaka, Misa Sunagawa, Emi Kawashima, Susumu Ishii, Mami Nishimura, Masashi Kasami, Koki Yano, Dapeng Wang and Mamoru Furuta
    誌名：ECS Solid State Lett. 2013 volume 2, issue 12, P107-P109
11. 題名：“Stoichiometry Control of ZnO Thin Film by Adjusting Working Gas Ratio during Radio Frequency Magnetron Sputtering”,
    著者：Chaoyang Li, Dapeng Wang, Zeming Li, Xin Li, Toshiyuki Kawaharamura and Mamoru Furuta
    誌名：Journal of Materials Volume 2013 (2013), Article ID 547271
12. 題名：“ミストCVD法によるAlOx薄膜作製に対するO3支援の効果”,
    著者：内田 貴之, 川原村 敏幸, 古田 守, 眞田 克
    誌名：材料 Vol. 62 (2013) No. 11 p. 663-667


[2012年] 7編

1. 題名：“Photo Induced Negative Bias Instability of Zinc Oxide Thin-Film Transistors”,
   著者：S. Shimakawa, D. Wang, and M. Furuta
   誌名：Japanese Journal of Applied Physiscs, 51 (2012) 108003
2. 題名：“Electrical properties of thin-film transistors with an indium gallium zinc oxide channel and aluminium oxide gate dielectric stack formed by solution-based atmospheric pressure chemical vapor deposition”,
   著者：M. Furuta, T. Kawaharamura, D. Wang, T. Hirao, T. Toda, and G. T. Dang
   誌名：IEEE Electron Devices Letters, 33 (2012) pp.851-853
3. 題名：“Crystallization Using Biomineralized Nickel Nanodots of Amorphous Silicon Thick Films Deposited by Chemical Vapor Deposition, Sputtering and Electron Beam Evaporation”,
   著者：T. Nishida, K. Fuse, M. Furuta, Y. Ishikawa, and Y. Uraoka
   誌名：Japanese Journal of Applied Physics, 51 (2012) 03CA01
4. 題名：“Successful Growth of Conductive Highly Crystalline Sn-Doped a-Ga2O3 Thin Films by Fine-Channel Mist Chemical Vapor Deposition”,
   著者：T. Kawaharamura, G. T. Dang, and M. Furuta
   誌名：Japanese Journal of Applied Physics, 51 (2012) 040207
5. 題名：“Photoleakage current of TFTs with ZnO channels formed at various oxygen partial pressure under visible light irradiation”,
   著者：S. Shimakawa, Y. Kamada, T. Kawaharamura, D. Wang, C. Li, S. Fujita, and T. Hirao, and M. Furuta,
   誌名：Japanese Journal of Applied Physics, 51 (2012) 03CB04
6. 題名：“Well-arrayed ZnO nanostructure formed by multi-annealing processes at low temperature”,
   著者：D. Wang, Z. Li, T. Kawaharamura, M. Furuta, T. Narusawa, and C. Li,
   誌名：J. Phys. Status Solidi C, 9 (2012) pp.194-197
7. 題名：“A 128×96 Pixel, 50 m Pixel Pitch Transparent Readout Circuit using InGaZnO4 Thin Film Transistor Array with Indium-Tin-Oxide Eletrodes for Organic Image Sensor”,
   著者：T. Sakai, H. Seo, S. Aihara, M. Kubota, N. Egami, D. Wang, and M. Furuta,
   誌名：Japanese Journal of Applied Physics, 51 (2012) 010202


[2011年] 12編

1. 題名：“Photocurrent and Persistent Photoconductivity in Zinc Oxide Thin-Film Transistors under Ultraviolet-Light Irradiation”,
   著者：M. Furuta, Y. Kamada, M. Kimura, S. Shimakawa, T. Kawaharamura, S. Wang, C. Li, S. Fujita, and T. Hirao,
   誌名：Japanese Journal of Applied Physics, 50 (2011) 110204
2. 題名：“Control of Swelling Height of Si Crystal by Irradiating Ar Beam”,
   著者：S. Momota, J. Zhang, T. Toyonaga, H. Terauchi, K. Maedam J. Taniguchi, T. Hirao, M. Furuta, and T. Kawaharamura,
   誌名：Journal of Nanoscience and Nanotechnology, Accepted (2011)
3. 題名“Study on Oxygen Source and Its Effect on Film Properties of ZnO Deposited by Radio Frequency Magnetron Sputtering”
   著者：Y. Kamada, M. Furuta, T. Hiramatsu, T. Kawaharamura, D. Wang, S. Shimakawa, C. Li, S. Fujita, and T. Hirao,
   誌名：Applied Surface Science, 258 (2011) pp.695-699.
4. 題名：“Extraction of Trap Densities in ZnO Thin-film Transistors and Dependence on Oxygen Partial Pressures during Sputtering of ZnO Films”,
   著者：M. Kimura, M. Furuta, Y. Kamada, T. Hiramatsu, T. Matsuda, H. Furuta, C. Li, S. Fujita, and T. Hirao
   誌名：IEEE Trans. Electron Devices, 58 (2011) pp. 3018~3024.
5. 題名：“ZnO Thin-Film Transistors with SiNx/SiOx Stacked Gate Insulators: Trap Densities and N2O Flow Rate Dependence”,
   著者：M. Kimura, M. Furuta, Y. Kamada, T. Hiramatsu, T. Matsuda, H. Furuta, C. Li, S. Fujita, and T. Hirao
   誌名：Electrochem. Solid-State Lett., 14 (2011) pp. H365~H367.
6. 題名：“Influence of Sputtering Pressure on Band Gap of Zn1-xMgxO Thin Film Prepared by Radio Frequency Magnetron Sputtering”
   著者：D. Wang, T. Narusawa, T. Kawaharamura, M. Furuta, and C. Li
   誌名：Journal of Vacuum Science and Technology B, 29(5) (2011) 051205.
7. 題名：“Trap Densities in ZnO Thin-Film Transistors with SiOx Gate Insulators by Several Deposition Conditions”,
   著者：M. Kimura, M. Furuta, Y. Kamada, T. Hiramatsu, T. Matsuda, H. Furuta, C. Li, S. Fujita, and T. Hirao,
   誌名：Electrochemical and Solid-State Letters, 14 (2011) pp. H365-H367
8. 題名：“Effect of Chemical Stoichiometry of Channel Region on Bias Instability in ZnO Thin-film Transistors”,
   著者：Y. Kamada, S. Fujita, M. Kimura, T. Hiramatsu, T. Matsuda, M. Furuta, and T. Hirao
   誌名：Applied Physics Letters, 98, (2011) 103512
9. 題名：“Reduction of Photo-Leakage Current in ZnO Thin-Film Transistors with Dual-Gate Structure“
   著者：Y. Kamada, S. Fujita, M. Kimura, T. Hiramatsu, T. Matsuda, M. Furuta, and T. Hirao,
   誌名：IEEE Electron Device Letters, 32, (2011) pp. 509-511
10. 題名：“Positive Bias Instability of Bottom-Gate Zinc Oxide Thin-Film Transistors (ZnO TFTs) with a SiOx/SiNx Stacked Gate Insulator”,
    著者：M. Furuta, Y. Kamada, T. Hiramatsu, C. Li, M. Kimura, S. Fujita, and T. Hirao,
    誌名：Japanese Journal of Applied Physics, 50, (2011) 03CB09
11. 題名：“Behavior of Oxygen in Zinc Oxide Films Through Thermal Annealing and Its Effect on Sheet Resistance”,
    著者：T. Hiramatsu, M. Furuta, T. Matsuda, C. Li, and T. Hirao
    誌名：Applied Surface Science, 257, (2011) pp. 5480-5483
12. 題名：“A 128×96 Pixel Stacked-Type Color Image Sensor: Stack of Individual Blue-, Green-, and Red-Sensitive Organic Photoconductive Films Integrated with a ZnO Thin-Film Transistor Readout Circuit”,
    著者：H. Seo, S. Aihara, T. Watabe, H. Ohtake, T. Sakai, M. Kubota, N. Egami, T. Hiramatsu, M. Furuta, and T. Hirao
    誌名：Japanese Journal of Applied Physics, 50, (2011) 024103


[2010年] 17編

1. 題名：“Influence of Substrate Bias Voltage on Optical and Structural Characteristics of Zinc Oxide Films Prepared by Radio Frequency Magnetron Sputtering,”
   著者：C. Li, T. Hiramatsu, T. Matsuda, M. Furuta, and T. Hirao,
   誌名：International Journal of Materials Engineering and Technology, 4, (2010) pp. 39~47
2. 題名：“Mechanism Analysis of Photoleakage Current in ZnO Thin-Film Transistors using Device Simulation”
   著者：M. Kimura, Y. Kamada, S. Fujita, T. Hiramatsu, T. Matsuda, M. Furuta, and T. Hirao
   誌名：Applied Physics Letters, 97, (2010) 163503
3. 題名：“Analysis of Hump Characteristics in Thin-Film Transistors with ZnO Channel Deposited by Sputtering under Various Oxygen Partial Pressures”,
   著者：M. Furuta, Y. Kamada, M. Kimura, T. Hiramatsu, T. Matsuda, C. Li, S. Fujita, and T. Hirao,
   誌名：IEEE Electron Device Letters, 31, (2010) pp. 1257-1259
4. 題名：“Crystal Structure Analysis of Multi-Walled Carbon Nanotube Forests by Newly Developed Cross-Sectional XRD measurements”,
   著者：H. Furuta, T. Kawaharamura, M. Furuta, K. Kawabata, and T. Hirao, T. Komukai, K. Yoshihara, Y. Shimomoto, and T. Oguchi,
   誌名：Applied Physics Express(APEX), 3, (2010) 105101
5. 題名：“Uniformity and Stability in Zinc Oxide Thin-Film Transistors (ZnO TFTs)”,
   著者：M. Furuta, M. Kimura, T. Hiramatsu, T. Nakanishi, C. Li, and T. Hirao,
   誌名：Journal of Society for Information Display, 18/10, (2010) pp. 773-778
6. 題名：“Analysis of Subthreshold Photo-Leakage Current in ZnO Thin-Film Transistors using Indium-Ion Implantation”,
   著者：Y. Kamada, S. Fujita, T. Hiramatsu, T. Matsuda, M. Furuta, and T. Hirao,
   誌名：Solid State Electronics, 54, (2010) pp. 1392-1397
7. 題名：“Simulation Study of In-plane Type Triode Carbon Nanotube Emitter”,
   著者：H. Furuta, K. Ishii, K. Okada, M. Furuta, and T. Hirao,
   誌名：Journal of Vacuum Science and Technology B, 28(4), (2010) pp. 878-881
8. 題名：“High-Density Short-Length Directly Grown CNT Pattered Emitter on Glass Substrate”, 
   著者：H. Furuta, T. Hiramatsu, K. Kawabata, M. Furuta, A. Hatta, T. Matsuda, C. Li, and T. Hirao,
   誌名：e-Journal of Surface and Nanotechnology, 8, (2010) pp. 336-339
9. 題名：“Thermal Stability of ZnO Thin Films Prepared by RF-Magnetron Sputtering Evaluated by Thermal Desorption Spectroscopy.”,
   著者：T. Matsuda, M. Furuta, T. Hiramatsu, H. Furuta, C. Li, and T. Hirao,
   誌名：Applied Surface Science, 256, (2010) pp. 6350-6353
10. 題名："Enhanced Nucleation of Microcrystalline Silicon Thin-films Deposited by Inductively Coupled Plasma Chemical Vapor Deposition (ICP-CVD) with Low-Frequency Pulse Substrate Bias”,
    著者：M. Furuta, T. Hiramatsu, and T. Hirao,
    誌名：Japanese Journal of Applied Physics, 49, (2010) 050202
11. 題名：“Activation Behavior of Boron Implanted Poly-Si on Glass Substrate”,
    著者：M. Furuta, K. Shimamura, H. Tsubokawa, K. Tokushige, H. Furuta and T. Hirao,
    誌名：Thin Solid Films, 518, (2010) pp. 4477-4481
12. 題名：“Comparison of Structural and Photoluminescence Properties of ZnO Nanostructures Influenced by Gas Ratio and Substrate Bias during Radio Frequency Sputtering”,
    著者：C. Li, T. Matsuda, T. Kawaharamura, H. Furuta, M. Furuta, T. Hiramatsu, T. Hirao, Y. Nakanishi, and K. Ichinomiya,
    誌名：Journal of Vacuum Science and Technology B, 28, (2010) pp. C2B51-C2B55
13. 題名：“Crystallinity and Resistivity of ZnO Thin Films with Indium Implantation and Post Annealing”,
    著者：T. Matsuda, M. Furuta, T. Hiramatsu, H. Furuta and T. Hirao,
    誌名：Journal of Vacuum Science and Technology A, 28, (2010) pp. 135-138
14. 題名：“Effect of Surface Treatment of Gate-insulator on Uniformity in Bottom-gate ZnO Thin-film Transistors”,
    著者：M. Furuta, T. Nakanishi, M. Kimura, T. Hiramatsu, T. Matsuda, T. Kawaharamura, H. Furuta, and T. Hirao,
    誌名：Electrochemical and Solid-State Letters, 13, (2010) pp. H101-H104
15. 題名：“有機光電膜とZnO TFT回路の積層構造を用いた有機撮像デバイスの原理実証実験”,
    著者：瀬尾北斗、相原聡、難波正和、渡辺敏久、大竹浩、久保田節、江上典文、平松孝浩、松田時宜、古田守、新田浩士、平尾孝、
    誌名：映像情報メディア学会誌, 64, (2010) pp. 365-371  
16. 題名：“Effect of Pulsed Substrate Bias on Film Properties of SiO2 Deposited by Inductively Coupled Plasma Chemical Vapor Deposition”,
    著者：T. Hiramatsu, T. Matsuda, H. Furuta, H. Nitta, T. Kawaharamura, C. Li, M. Furuta, and T. Hirao,
    誌名：Japanese Journal of Applied Physics, 49, (2010) 03CA03
17. 題名：“Photo Leakage Current of ZnO TFTs in the Visible Light”,
    著者：Y. Kamada, S. Fujita, T. Hiramatsu, T. Matsuda, H. Nitta, M. Furuta, and T. Hirao,
    誌名：Japanese Journal of Applied Physics, 49, (2010) 03CB03


[2009年以前]

1. 題名：“Thermal Stability and Sheet Resistance of Undoped ZnO Films Deposited on Insulators”,
   著者：M. Furuta, T. Hiramatsu, T. Matsuda, C. Li, H. Furuta, and T. Hirao,
   誌名：Electrochemical and Solid-State Letters, 12, (2009) pp. K74-K76
2. 題名：“Intense Green Cathodoluminescence from Low-temperature–deposited ZnO Films with Lotus Roots Nanostructures”,
   著者：C. Li, T. Kawaharamura, T. Matsuda, H. Furuta, T. Hiramatsu, M. Furuta, and T. Hirao,
   誌名：Applied Physics Express (APEX), 2, (2009) 091601
3. 題名："Stacked Image Sensor with Green- and Red-Sensitive Organic Photoconductive Films Applying Zinc-Oxide Thin Film Transistors to a Signal Readout Circuit",
   著者：S. Aihara, H. Seo, M. Namba, T. Watabe, H. Ohtake, M. Kubota, N. Egami, T. Hiramatsu, T. Matsuda, M. Furuta, H. Nitta and T. Hirao,
   誌名：IEEE Transaction on Electron Devices, Vol. 56, No.11, (2009) pp. 2570-2576
4. 題名：“Effects of Substrate on the Structural, Electrical and Optical Properties of Al-doped ZnO Films Prepared by Radio Frequency Magnetron Sputtering”,
   著者：C. Li, M. Furuta, T. Matsuda, T. Hiramatsu, H. Furuta and T. Hirao,
   誌名：Thin Solid Films, 517, (2009) pp. 3265-3268
5. 題名：“Effect of Substrate Bias on Crystal Structure and Thermal Stability of Sputter-Deposited ZnO Films”,
   著者：T. Hiramatsu, M. Furuta, H. Furuta, T. Matsuda, C. Li, and T. Hirao,
   誌名：Journal of Crystal Growth, 311, (2009) pp. 282-285
6. 題名：“Bottom-Gate Zinc Oxide Thin-Film Transistors (ZnO TFTs) for AM-LCDs”,
   著者：T. Hirao, M. Furuta, T. Hiramatsu, T. Matsuda, C. Li, H. Furuta, H. Hokari, M. Yoshida, H. Ishii, and M. Kakegawa,
   誌名：IEEE Transaction on Electron Devices, 55, (2008) pp. 3136-3142
7. 題名：“Influence of Amorphous Buffer Layers on the Crystallinity of Sputter-Deposited Undoped ZnO Films”,
   著者：T. Matsuda, M. Furuta, T. Hiramatsu, C. Li, H. Furuta and T. Hirao,
   誌名：Journal of Crystal Growth, 310, (2008) pp. 31-35
8. 題名：“Oxygen Bombardment Effects on Average Crystallite Size of Sputter-Deposited ZnO Films”,
   著者：M. Furuta, T. Hiramatsu, T. Matsuda, C. Li, H. Furuta and T. Hirao,
   誌名：Journal of Non-Crystalline Solids, 354, (2008) pp. 1926-1931
9. 題名：“基板バイアスにより制御されたZnO薄膜の結晶性とドライエッチングにより形成される側壁形状との相関”,
   著者：平松孝浩、古田守、古田寛、松田時宜、平尾孝、
   誌名：真空, 50, (2007) pp. 498-501
10. 題名：“RF Power and Thermal Annealing Effect on the Properties of Zinc Oxide Films Prepared by Radio Frequency Magnetron Sputtering”,
    著者：C. Li, M. Furuta, T. Matsuda, T. Hiramatsu, H. Furuta and T. Hirao,
    誌名：Research Letter in Material Science, 2007, (2007) pp. 26459-1~5
11. 題名：“Sheet Resistance and Crystallinity of Ga- and Al- Implanted Zinc Oxide Thin Films with Post Annealing”
    著者：T. Matsuda, M. Furuta, T. Hiramatsu, H. Furuta and T. Hirao,
    誌名：Journal of Vacuum Science and Technology A, 25, (2007) pp. 706-710
12. 題名：“Influence of Thermal Annealing on Microstructure of Zinc Oxide Films Deposited by RF Magnetron Sputtering”,
    著者：T. Hiramatsu, M. Furuta, H. Furuta, T. Matsuda, and T. Hirao,
    誌名：Japanese Journal of Applied Physics, 46, (2007) pp. 3319-3323
13. 題名：“Effects of Energetic Particle Bombardment on the Microstructure of Zinc Oxide (ZnO) Films Deposited by rf Magnetron Sputtering”,
    著者：M. Furuta, T. Hiramatsu, T. Matsuda, H. Furuta, and T. Hirao,
    誌名：Japanese Journal of Applied Physics, 46, (2007) pp. 4038-4041
14. 題名：“Novel Top-Gate Zinc Oxide Thin-Film Transistors (ZnO-TFTs) for AM-LCDs”,
    著者：T. Hirao, M. Furuta, H. Furuta, T. Matsuda, T. Hiramatsu, H. Hokari, and M. Yoshida
    誌名：Journal of Society for Information Display, 15/1, (2007) pp. 17-22
15. 題名：“SiO2 Insulator Film Synthesized at 100 °C using Tetramethylsilane by Inductively Coupled Plasma Chemical Vapor Deposition”,
    著者：H. Furuta, M. Furuta, T. Matsuda, T. Hiramatsu, and T. Hirao,
    誌名：Japanese Journal of Applied Physics, 46, (2007) pp. L237-L240
16. 題名：“選択エッチング法によるナノサイズ炭素エミッタ形成”,
    著者：青木 勝詔, 鈴木 恵友, 高梨 久美子, 石井 一久, B. S. SATYANARAYANA, 尾浦 憲治郎, 古田 寛, 古田 守, 平尾 孝
    誌名：真空, 49, (2006) pp. 430-432
17. 題名：“Structural Analysis of High-Density Vertically Aligned Carbon Nanotubes Grown by Thermal Chemical Vapor Deposition with Fe/Al Multilayer Catalyst”,
    著者：T. Komukai, K. Aoki, H. Furuta, M. Furuta, K. Oura, and T. Hirao,
    誌名：Japanese Journal of Applied Physics, 45, (2006) pp. 8988-8990
18. 題名：“Density Control of Carbon Nanotubes Through The Thickness of Fe/Al Multilayer Catalyst”,
    著者：T. Komukai, K. Aoki, H. Furuta, M. Furuta, K. Oura, and T. Hirao,
    誌名：Japanese Journal of Applied Physics, 45, (2006) pp. 6043-6045
19. 題名：“Low-Temperature Growth of Carbon Nanofiber by Thermal Chemical Vapor Deposition using CuNi Catalyst”,
    著者：K. Aoki, T. Yamamoto, H. Furuta, T. Ikuno, S. Honda, M. Furuta, K. Oura, and T. Hirao,
    誌名：Japanese Journal of Applied Physics, 45, (2006) pp. 5329-5331
20. 題名：“Reliability of Low-temperature Poly-Si TFTs with LDD Structures”,
    著者：M. Furuta, Y. Uraoka and T. Fuyuki,
    誌名：Japanese Journal of Applied Physics, 42, (2003) pp. 4257-4260
21. 題名：“Hydrogen Implantation Damage in Polycrystalline Silicon Thin Film Transistors Caused by Ion Doping”,
    著者：M. Furuta, H. Satani, T. Terashita, T. Tamura, and Y. Tsuchihashi
    誌名：Japanese Journal of Applied Physics, 41, (2002) pp. 1259-1264
22. 題名：“Bottom-Gate Poly-Si Thin Film Transistors using XeCl Excimer Laser Annealing and Ion Doping”,
    著者：M. Furuta, T. Kawamura, T. Yoshioka, and Y. Miyata,
    誌名：IEEE Transaction on Electron Devices, 40, (1993) pp. 1964-1969
23. 題名：“Polycrystalline Silicon Recrystallized with Excimer Laser Irradiation and Impurity Doping using Ion Doping Method“,
    著者：Y. Miyata, M. Furuta, T. Yoshioka, and T. Kawamura,
    誌名：Journal of Applied Physics, 73, (1993) pp. 3271-3275
24. 題名：“Low-Temperature Polycrystalline Silicon Thin-Film Transistors for Large-Area Liquid Crystal Display“,
    著者：Y. Miyata, M. Furuta, T. Yoshioka, and T. Kawamura,
    誌名：Japanese Journal of Applied Physics, 31, (1992) pp. 4559-4562
25. 題名：“Lateral Growth on (110) GaAs Substrates by Metalorganic Chemical Vapor Deposition”,
    著者：K. Okamaoto, M. Furuta, and K. Yamaguchi,
    誌名：Japanese Journal of Applied Physics, 27, (1988) pp. L437-L440
26. 題名：“Zn and Si Doping in {110} GaAs Epilayers Grown by Metalorganic Chemical Vapor Deposition”,
    著者：K. Okamaoto, M. Furuta, and K. Yamaguchi,
    誌名：Japanese Journal of Applied Physics, 27, (1988) pp. L2121-L2124